SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM

The method comprises the following steps: (a) supplying a film forming gas into a processing container in which a substrate is accommodated, and forming a film on the substrate; (b) supplying a fluorine-containing gas into the processing container in which the substrate is not accommodated, and removing deposits including the film adhering to the processing container; (c) forming a pre-coating film in the processing container by supplying a pre-coating gas into the processing container from which the deposits that do not contain the substrate have been removed; and (d) forming a film on the substrate by supplying a film-forming gas into the processing container after the formation of the pre-coating film containing the substrate, and in (c), adjusting the film thickness distribution of the pre-coating film in accordance with the distribution of the residual fluorine concentration in the processing container. 具有如下工序：(a)向收纳有基板的处理容器内供给成膜气体，在所述基板上形成膜；(b)向未收纳所述基板的所述处理容器内供给含氟气体，去除附着于所述处理容器内的包含所述膜的堆积物；(c)向未收纳所述基板的所述