IGBT (Insulated Gate Bipolar Translator) module and packaging process

The invention belongs to the technical field of semiconductors, and particularly relates to an IGBT (Insulated Gate Bipolar Translator) module and a packaging process. The connection mode of the IGBT module is chip-first copper frame-DBC plate and DBC plate-second copper frame-copper substrate, fixe...

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Hauptverfasser: WEN DONGWEI, ZHANG RU
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention belongs to the technical field of semiconductors, and particularly relates to an IGBT (Insulated Gate Bipolar Translator) module and a packaging process. The connection mode of the IGBT module is chip-first copper frame-DBC plate and DBC plate-second copper frame-copper substrate, fixed-point high-efficiency heat conduction is realized by adopting the first copper frame and the second copper frame, and meanwhile, by utilizing the characteristics of affinity solder paste, a small amount of solder paste is filled in a gap, the structure is firmly fixed by utilizing the upper and lower pressure difference, and the chip is positioned and fixed in height. Due to the fact that the first copper frame and the second copper frame are additionally arranged, the heat conduction and electric conduction mode is changed, the solder paste plays a role in reinforcing connection, vacuumizing is not necessary any more in the high-temperature step, negative effects caused by vacuumizing can be avoided, such as the