IGBT module and processing method

The invention belongs to the technical field of semiconductors, and particularly relates to an IGBT (Insulated Gate Bipolar Translator) module and a processing method. The IGBT module comprises a substrate, a ceramic copper-clad plate and a chip, the substrate is provided with the ceramic copper-clad plate, the ceramic copper-clad plate is provided with a common connection area of a collector electrode of an IGBT chip and a cathode of an FRD chip, a grid electrode connection area of the IGBT chip and an emitter electrode connection area of the IGBT chip, the collector electrode of the IGBT chip and the cathode of the FRD chip are welded to the common connection area of the collector electrode of the IGBT chip and the cathode of the FRD chip, and the chip is arranged on the ceramic copper-clad plate. The grid electrode of the IGBT chip is connected to the grid electrode connecting region of the IGBT chip through a grid electrode bonding wire; the emitting electrode of the IGBT chip and the anode of the FRD chi