Silicon carbide material, preparation method thereof and application of carbon powder
The invention relates to a silicon carbide material and a preparation method and application thereof.The preparation method of the silicon carbide material comprises the following steps that a silicon carbide raw material layer and an adsorbent layer are sequentially arranged at the bottom of a cruc...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a silicon carbide material and a preparation method and application thereof.The preparation method of the silicon carbide material comprises the following steps that a silicon carbide raw material layer and an adsorbent layer are sequentially arranged at the bottom of a crucible body, the adsorbent layer comprises carbon powder, the particle size D of the carbon powder is larger than 1.18 mm and smaller than or equal to 3.35 mm, and the carbon powder is activated carbon; a crucible cover and a crucible body are matched and sealed to form a crucible containing a silicon carbide raw material layer and an adsorbent layer, a seed crystal layer is arranged above the adsorbent layer in the crucible, and then the crucible is placed in a growth furnace to prepare the silicon carbide material by adopting a gas phase transmission method. The preparation method can effectively reduce the generation of carbon wrappage and microtubes, effectively prevents silicon steam from corroding components su |
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