Gallium nitride amplitude limiter and preparation method of gallium nitride amplitude limiter

The invention provides a gallium nitride amplitude limiter and a preparation method of the gallium nitride amplitude limiter. The gallium nitride amplitude limiter comprises three stages of amplitude limiting circuits, wherein the three stages of amplitude limiting circuits are sequentially connecte...

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Bibliographische Detailangaben
Hauptverfasser:	BU AIMIN, HAO XIAOLIN, FENG ZHIHONG, HU ZEXIAN, LIANG SHIXIONG, LIU FEIFEI, LIU JINGLIANG, LYU YUANJIE, SONG JIEJING, XU SENFENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CONTROL OF AMPLIFICATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention provides a gallium nitride amplitude limiter and a preparation method of the gallium nitride amplitude limiter. The gallium nitride amplitude limiter comprises three stages of amplitude limiting circuits, wherein the three stages of amplitude limiting circuits are sequentially connected to a main transmission line according to the signal transmission direction of the main transmission line of the gallium nitride amplitude limiter; the first-stage amplitude limiting circuit comprises 2N gallium nitride PIN diodes; any N gallium nitride PIN diodes are connected in series to form two gallium nitride PIN diode strings, the anode end of the first gallium nitride PIN diode string is connected with the main transmission line, the cathode end of the first gallium nitride PIN diode string is grounded, the cathode end of the second gallium nitride PIN diode string is connected with the main transmission line, and the anode end of the second gallium nitride PIN diode string is grounded; the second-stage am