Semiconductor device
It is preferable to improve characteristics in a semiconductor device such as an IGBT device. A semiconductor device is provided with: a semiconductor substrate; a gate trench portion; an emitter; a mesa portion; an emitter region of a first conductivity type provided on the upper surface of the mes...
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| Zusammenfassung: | It is preferable to improve characteristics in a semiconductor device such as an IGBT device. A semiconductor device is provided with: a semiconductor substrate; a gate trench portion; an emitter; a mesa portion; an emitter region of a first conductivity type provided on the upper surface of the mesa portion and in contact with the gate trench portion; a contact region of a second conductivity type provided on the upper surface of the mesa portion; a base region of a second conductivity type, which is provided below the emitter region and the contact region on the semiconductor substrate, is in contact with the gate trench portion, and has a lower doping concentration than the contact region; a drift region of a first conductivity type provided below the base region in the semiconductor substrate and having a doping concentration lower than that of the emitter region; and a high-resistance section that is provided between the emitter and the base region in the depth direction of the semiconductor substrate an |
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