Semiconductor laser bar cleavage method and laser bar

The invention provides a semiconductor laser bar cleavage method and a laser bar. The semiconductor laser bar cleavage method comprises the steps that a plurality of first cleavage lines are arranged on a wafer; separating an edge laser bar based on the first cleavage line; calculating deviation data between a first cleavage line and an actual cleavage line of the edge laser bar; adjusting the plurality of first cleavage lines into second cleavage lines based on the deviation data; and separating a central laser bar based on the plurality of second cleavage lines. In this way, the production yield of the laser bar can be improved. 本申请提供了一种半导体激光器巴条的解理方法及激光器巴条，包括：在晶圆上设置若干第一解理线；基于上述第一解理线分离出边缘激光巴条；计算上述边缘激光巴条的第一解理线与实际解理线之间的偏差数据；基于上述偏差数据将上述若干第一解理线均调整为第二解理线；基于上述若干第二解理线分离出中心激光巴条。通过上述方式，本申请能够提升激光巴条的生产良率。