Light emitting diode and light emitting device

The invention relates to the technical field of semiconductors, and provides a light-emitting diode which comprises a semiconductor lamination layer, an ohmic contact electrode and a first electrode, the semiconductor lamination layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are laminated in sequence, and the semiconductor lamination layer is provided with a first side and a second side which are opposite to each other; the ohmic contact electrode is connected with the second semiconductor layer, the first electrode is connected with the first semiconductor layer and comprises a starting electrode, N first extension electrodes and M second extension electrodes, the starting electrode is located on the first side, and the N first extension electrodes are connected with the starting electrode and extend towards the second side; the second extension electrode is connected with the first extension electrode and extends towards the second side, M is large