Tilted photodetector unit

The invention relates to a tilted photodetector unit. A photodetector cell (100) includes a substrate (105) having a semiconductor surface layer (110), and a trench (115) in the semiconductor surface layer (110). The trench (115) has inclined side walls including a first inclined side wall (115a) and a second inclined side wall (115b). A pn junction, PIN structure, or phototransistor includes an active p region and an active n region (122) forming a junction including a first junction providing a first photodetector element (120a) along a first sloped sidewall (115a) and a second junction spaced apart from the first junction providing a second photodetector element (120b) along a second sloped sidewall (115b). At least the p-type anode contact (110a) and at least the n-type cathode contact (122a, 122b) are in contact with the active p region and the active n region (122) of the first photodetector element (120a) and the second photodetector element (120b). The sloped sidewalls (115a, 115b) provide an external