Preparation method of SiH4Base SiOx insulating film

The invention relates to a preparation method of a SiH4BaseSiOx insulating film. The preparation method comprises the following steps: placing a substrate on which a SiH4BaseSiOx insulating layer is to be deposited into a CVD (Chemical Vapor Deposition) vacuum cavity through a vacuum transmission mechanism; simultaneously introducing 41730sccm of SiH and 460sccm of N2O6, and controlling the pressure of the cavity to be 1350mtorr through a pressure regulating valve; dissociating process gas through plasma at the output power of 7900 W to form a SiH4BaseSiOx thin film which is deposited on the glass substrate; and after the film deposition is completed, closing the plasma system and discharging SiH4 and N2O gas in the cavity. The non-metal film SiH4BaseSiOx prepared by the method is used between the semiconductor layer and the gate metal layer, the film has the characteristics that the tensile stress deformation generated by the gate metal layer under the influence of a high-temperature process can be effective