Thin film transistor, manufacturing method thereof and display substrate

The invention provides a thin film transistor, a manufacturing method thereof and a display substrate, and belongs to the technical field of thin film transistors. The thin film transistor comprises: a substrate; the grid electrode is positioned on the substrate; the active layer is positioned on one side, far away from the substrate, of the grid electrode; the orthographic projection of the active layer on the substrate is overlapped with the orthographic projection of the grid electrode on the substrate; the source electrode and the drain electrode are located on the side, away from the substrate, of the active layer, and the source electrode and the drain electrode are connected with the active layer; wherein the resistance between the grid electrode and the drain electrode is greater than the resistance between the grid electrode and the source electrode. The voltage withstanding range of the thin film transistor can be improved. 本公开提供了一种薄膜晶体管及其制作方法、显示基板，属于薄膜晶体管技术领域。其中，薄膜晶体管包括：衬底基板；位于所述衬底基板上的栅极；位于所述栅极远离所述