Polycrystalline SiC molded body and manufacturing method thereof

The purpose of the present invention is to provide: a polycrystalline SiC molded body which is capable of achieving uniform plasma etching when used as an electrode; and a method for producing the polycrystalline SiC molded body. The main surface of the polycrystalline SiC molded body has a Wa (0-10...

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Bibliographische Detailangaben
Hauptverfasser:	OISHI JUNYA, HARADA YOHEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
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Beschreibung
Zusammenfassung:	The purpose of the present invention is to provide: a polycrystalline SiC molded body which is capable of achieving uniform plasma etching when used as an electrode; and a method for producing the polycrystalline SiC molded body. The main surface of the polycrystalline SiC molded body has a Wa (0-10 mm) of 0.00-0.05 [mu] m or less, a Wa (10-20 mm) of 0.13 [mu] m or less, and a Wa (20-30 mm) of 0.20 [mu] m or less. 本发明旨在提供能够在被用作电极时实现均匀的等离子体蚀刻的多晶SiC成型体及其制造方法。多晶SiC成型体主面的Wa(0～10mm)为0.00～0.05μm以下，Wa(10～20mm)为0.13μm以下，Wa(20～30mm)为0.20μm以下。