Semiconductor device and manufacturing method thereof

The invention discloses a semiconductor device and a manufacturing method thereof, and the manufacturing method of the semiconductor device comprises the following steps: forming a first intermetallic dielectric layer on a substrate; a cap layer is formed on the first intermetallic dielectric layer....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG HUILIN, ZHANG JINGYIN, XIE JINYANG, WENG CHENYI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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