Semiconductor device and manufacturing method thereof

The invention discloses a semiconductor device and a manufacturing method thereof, and the manufacturing method of the semiconductor device comprises the following steps: forming a first intermetallic dielectric layer on a substrate; a cap layer is formed on the first intermetallic dielectric layer. A connection structure is formed on the substrate to pass through the cap layer and the first intermetallic dielectric layer. A magnetic tunnel junction stack is formed over the connection structure and the cap layer. A patterning process is performed on the magnetic tunnel junction stack to form a magnetic tunnel junction structure on the connection structure and remove the cap layer. A second intermetallic dielectric layer is formed on the first intermetallic dielectric layer. A second intermetallic dielectric layer surrounds the magnetic tunnel junction structure. A semiconductor device includes a substrate, a connection structure, a first intermetallic dielectric layer, a magnetic tunnel junction structure and