Photoelectric detector and preparation method thereof

The invention relates to the technical field of photoelectric detection, in particular to a photoelectric detector and a preparation method thereof, and the photoelectric detector comprises a substrate, a polystyrene microsphere layer, a photoelectric semiconductor layer and an electrode layer which...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: XIE YIFEI, ZENG YUJIA, ZHANG SUYUN, QI LU, DAI SICHAO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to the technical field of photoelectric detection, in particular to a photoelectric detector and a preparation method thereof, and the photoelectric detector comprises a substrate, a polystyrene microsphere layer, a photoelectric semiconductor layer and an electrode layer which are sequentially stacked from bottom to top. According to the invention, the insulated polystyrene microspheres are introduced as a medium between the substrate and the photoelectric semiconductor layer, so that the improvement of the light responsivity and the red shift of the optimal response wave band are realized. In the aspect of light response, firstly, the polystyrene microsphere layer is prepared from polystyrene microspheres, so that the area of a thin film deposited on the polystyrene microsphere layer is larger than that of a flat thin film, secondly, a flexoelectric field is induced to be generated due to larger strain gradient generated by the contact part of the thin film and the microspheres, and bo