Power transistor with terminal trench in terminal reduced surface field region

The invention relates to a power transistor with terminal trenches in terminal reduced surface electric field regions. An apparatus (100) includes a transistor formed on a substrate (302). The transistor includes an n-type drain contact layer (312), an n-type drain layer (314), an oxide layer (332),...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOTZON CHRISTOPHER B, KAWAHARA HIDEAKI, MOLLOY, SIMON, JOHN, SUZUKI MEGUMI, SIDHAR, SATRAMAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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