Integrated circuit device and method of forming same

Integrated circuit devices and methods of forming the same are provided. An integrated circuit device may include a transistor, a passive device, a substrate extending between the transistor and the passive device, and a power rail. The passive device may be spaced apart from the substrate. Each of...

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Bibliographische Detailangaben
Hauptverfasser: PARK SE HAN, HAM BOO-HYUN, HONG BYUNG-HAK, HWANG IN CHAN, YOON SEUNGAN, YIM JEONG HYUK, LI CHANGGEN, SEO KANG-ILL, JEONG MYUNG-HUN, LEE SEUNG-YOUNG, SON KIL-HWAN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Integrated circuit devices and methods of forming the same are provided. An integrated circuit device may include a transistor, a passive device, a substrate extending between the transistor and the passive device, and a power rail. The passive device may be spaced apart from the substrate. Each of the passive device and the power rail may have a first surface facing the substrate, and the first surface of the passive device is closer to the substrate than the first surface of the power rail. 本公开提供了集成电路器件及其形成方法。集成电路器件可以包括晶体管、无源器件、在晶体管和无源器件之间延伸的基板、以及电源轨。无源器件可以与基板间隔开。无源器件和电源轨中的每个可以具有面对基板的第一表面,并且无源器件的第一表面比电源轨的第一表面更靠近基板。