IGBT (Insulated Gate Bipolar Translator) chip with trench field cut-off structure and manufacturing method thereof

The invention provides an IGBT chip with a groove field cut-off structure and a manufacturing method thereof, the IGBT chip comprises a cellular region and a terminal region, the terminal region comprises a field cut-off structure, the field cut-off structure comprises at least one polycrystalline silicon groove region and at least one polycrystalline silicon film layer region, the at least one polycrystalline silicon groove region is communicated with the at least one polycrystalline silicon film layer region, and the at least one polycrystalline silicon groove region is communicated with the at least one polycrystalline silicon film layer region. And the at least one polycrystalline silicon film layer region extends along the inner side of the chip. According to the invention, a groove structure which is formed at the same time with a cellular region is adopted as an electric field cut-off ring on the outer side of a chip terminal region, the heavily doped N-type polycrystalline silicon filled in the groove