Semiconductor device and manufacturing method thereof
The invention provides a semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a first substrate which comprises a front surface and a back surface opposite to the front surface, the front surface of the first substrate is provided with a device structure, a...
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| Hauptverfasser: | , |
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | The invention provides a semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a first substrate which comprises a front surface and a back surface opposite to the front surface, the front surface of the first substrate is provided with a device structure, and the back surface of the first substrate is provided with a deep trench capacitor; the first insulating layer and the second insulating layer are respectively formed on the front surface and the back surface of the first substrate; a first interconnection structure and a second interconnection structure, the first interconnection structure is formed in the first insulating layer, and the second interconnection structure is formed in the second insulating layer; and the plug structure is formed in the first insulating layer, one end of the plug structure is electrically connected with the device structure through the first interconnection structure, and the other end of the plug structure is electrically connected |
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