Physical unclonable functions based on circuits including resistive memory elements

The invention relates to a physically unclonable function based on a circuit including resistive memory elements. The invention relates to circuits including resistive memory elements and methods of generating physically unclonable functions using these circuits. The circuit includes: a first resistive memory element; a second resistive memory element; a first transistor having a source/drain region connected to the first resistive memory element; and a second transistor having a source/drain region connected to the second resistive memory element. The circuit further includes a first inverter having an input connected to a first node between the first transistor and the first resistive memory element; and a second inverter having an input connected to a second node between the second transistor and the second resistive memory element. 本申请涉及基于包括电阻式存储器元件的电路的物理不可克隆函数。本申请涉及包括电阻式存储器元件的电路以及使用这些电路生成物理不可克隆函数的方法。该电路包括：第一电阻式存储器元件；第二电阻式存储器元件；具有连接到第一电阻式存储器元件的源极/漏极区的第一晶体管；以及具有连接到第二电阻式存储器元件的源极/漏极区的第二晶体管。该电路还包括：第一反相器，其具有连接