Methods for forming spacers and related structures

Methods for patterning and forming structures, and related structures and systems, are disclosed. The method includes forming a liner on sidewalls of the patterned resist. The patterned resist includes a first metal and the liner includes a second metal. 公开了用于图案化和形成结构的方法，以及相关的结构和系统。该方法包括在图案化抗蚀剂的侧壁上形...

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Hauptverfasser:	TOMCZAK YOSSI, PATEL, KANTIBHAI, AMBALAL
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	Methods for patterning and forming structures, and related structures and systems, are disclosed. The method includes forming a liner on sidewalls of the patterned resist. The patterned resist includes a first metal and the liner includes a second metal. 公开了用于图案化和形成结构的方法，以及相关的结构和系统。该方法包括在图案化抗蚀剂的侧壁上形成衬里。图案化抗蚀剂包括第一金属，衬里包括第二金属。