Sapphire crystal growth furnace and sapphire crystal growth system

The embodiment of the invention provides a sapphire crystal growth furnace and a sapphire crystal growth system, relates to the technical field of sapphire crystal growth through a kyropoulos method, and aims to solve the technical problem that in the accelerated rotation or decelerated rotation pro...

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Hauptverfasser: DUAN SHIFEI, SUI SHIWU, LU WEIPING, GE ZHUANG, LI JIAN, CHEN ZHAOBIN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The embodiment of the invention provides a sapphire crystal growth furnace and a sapphire crystal growth system, relates to the technical field of sapphire crystal growth through a kyropoulos method, and aims to solve the technical problem that in the accelerated rotation or decelerated rotation process of an output shaft of a power device, the generated force change is easily transmitted to a sensor, and the measurement result of the sensor is inaccurate. The sapphire crystal growth furnace comprises a sensor, a supporting frame and a rotating assembly, the rotating assembly comprises a power device and a lifting shaft, the power device is connected with the first end of the lifting shaft so as to drive the lifting shaft to rotate, and the second end of the lifting shaft is used for attaching seed crystals; the rotating assembly is installed on the supporting frame, and the supporting frame is connected with the sensor so that the gravity of the supporting frame and the gravity of the rotating assembly can b