Integrated component and method of forming integrated component

Some embodiments include an integrated component having a first memory region, a second memory region offset from the first memory region, and an intermediate region between the first memory region and the second memory region. Channel material pillars are disposed within the memory region. Conductive pillars are disposed within the intermediate region. A panel extends across the memory region and the intermediate region. The panel is laterally between a first memory block region and a second memory block region. A doped semiconductor material is within the memory region and the intermediate region, and proximate to the panel. The doped semiconductor material is at least a portion of a conductive source structure within the memory region. An insulating ring laterally surrounds a lower region of the conductive pillar and between the conductive pillar and the doped semiconductor material. An insulating liner is along an upper region of the conductive pillar. Some embodiments include methods of forming an integr