Edge-emitting semiconductor light-emitting structure and preparation method thereof

The invention discloses an edge-emitting semiconductor light-emitting structure and a preparation method thereof. The edge-emitting semiconductor light-emitting structure comprises a lower limiting layer, an active layer and an upper limiting layer which are sequentially stacked on a semiconductor s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LI QUANLING, WANG JUN, MIN DAYONG, TAN SHAOYANG, SHAO YE
Format: Patent
Sprache:chi ; eng
Schlagworte:
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