Edge-emitting semiconductor light-emitting structure and preparation method thereof

The invention discloses an edge-emitting semiconductor light-emitting structure and a preparation method thereof. The edge-emitting semiconductor light-emitting structure comprises a lower limiting layer, an active layer and an upper limiting layer which are sequentially stacked on a semiconductor substrate layer, the edge-emitting semiconductor light-emitting structure is provided with a first side wall and a second side wall which are oppositely arranged, and the first side wall and the second side wall are arranged in the slow axis direction of the edge-emitting semiconductor light-emitting structure; the edge-emitting semiconductor light-emitting structure is provided with a current injection region located between the first side wall and the second side wall, and the current injection region, the first side wall and the second side wall are arranged at intervals; the characteristic groove is located on at least one side of the current injection region in the slow axis direction, the characteristic groove