Method of forming semiconductor structure and method of forming integrated chip

Various embodiments of the present disclosure relate to a method of forming a semiconductor structure. The method includes bonding a first semiconductor wafer to a second semiconductor wafer. A bonding interface is disposed between the first semiconductor wafer and the second semiconductor wafer. The first semiconductor wafer has a peripheral region laterally surrounding a central region. A support structure is formed between a first outer edge of the first semiconductor wafer and a second outer edge of the second semiconductor wafer. A support structure is disposed within the peripheral region. And performing a thinning process on the second semiconductor wafer. The embodiment of the invention also provides a method for forming the integrated chip. 本公开的各个实施例涉及形成半导体结构的方法。该方法包括将第一半导体晶圆接合到第二半导体晶圆。接合界面设置在第一半导体晶圆和第二半导体晶圆之间。第一半导体晶圆具有横向地围绕中心区域的外围区域。在第一半导体晶圆的第一外边缘和第二半导体晶圆的第二外边缘之间形成支撑结构。支撑结构设置在外围区域内。对第二半导体晶圆执行减薄工艺。本发明的实施例还提供了形成集成芯片的方法。