SYSTEMS AND METHODS FOR ATOMIC LAYER DEPOSITION
The invention relates to systems and methods for atomic layer deposition. An atomic layer deposition (ALD) method may include delivering a first reactant vapor pulse into a reactor assembly. The first reactant vapor is supplied to a first reactant gas line. An inert gas is supplied to the first iner...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to systems and methods for atomic layer deposition. An atomic layer deposition (ALD) method may include delivering a first reactant vapor pulse into a reactor assembly. The first reactant vapor is supplied to a first reactant gas line. An inert gas is supplied to the first inert gas line at a first flow rate. The first reactant vapor and the inert gas are fed to the reactor assembly by means of a first feed line. The reactor assembly is purged by supplying the inert gas to the first inert gas line at a second flow rate that is higher than the first flow rate. A first portion of the inert gas may be fed back along a diffusion barrier portion of the first reactant gas line to provide an inert gas valve (IGV) upstream of the first inert gas line. A second portion of the inert gas may be fed to the reactor assembly by means of the first feed line.
本申请涉及用于原子层沉积的系统和方法。原子层沉积(ALD)方法可以包含将第一反应物蒸气脉冲输送到反应器组件中。向第一反应物气体管线供应所述第一反应物蒸气。以第一流动速率向第一非活性气体管线供应非活性气体。借助于第一进料管线将所述第一反应物蒸气和所述非活性气体馈送到所述反应器组件。通过以高于所 |
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