Semiconductor laser and method for producing semiconductor laser

The invention relates to a semiconductor laser (1), comprising a semiconductor body (2) having a plurality of resonator regions (3), the resonator regions (3) being arranged next to one another in a transverse direction and each having an active region (20) provided for generating radiation. The semiconductor body extends between two side surfaces (25), the laser radiation is emitted from the resonator region (3) at one of the two side surfaces (25) during operation of the semiconductor laser, and a layer sequence (4) is fastened to at least one of the side surfaces (25), which layer sequence forms at least part of the resonator mirror (5) for at least one resonator region (3). 提出一种半导体激光器(1)，具有半导体主体(2)，该半导体主体具有多个谐振器区域(3)，其中谐振器区域(3)沿横向方向彼此并排地设置并且分别具有设置用于产生辐射的有源区域(20)。半导体主体在两个侧面(25)之间延伸，其中激光辐射在半导体激光器运行中在两个侧面(25)之一处从谐振器区域(3)中射出，并且层序列(4)紧固在侧面(25)中的至少一个处，该层序列针对至少一个谐振器区域(3)形成谐振器镜(5)的至少一部分。