IGBT (Insulated Gate Bipolar Translator) fault detection circuit and method and electric equipment

The invention relates to an IGBT (Insulated Gate Bipolar Translator) fault detection circuit and method and electric equipment, the circuit is characterized in that a sampling resistor is arranged between an emitter of an IGBT and the ground, and an operational amplifier U1 and a controller are addi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: AN YAQIAN, GENG ZHOUTAO, LIAO CHANGHAO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to an IGBT (Insulated Gate Bipolar Translator) fault detection circuit and method and electric equipment, the circuit is characterized in that a sampling resistor is arranged between an emitter of an IGBT and the ground, and an operational amplifier U1 and a controller are additionally arranged, so that if the IGBT operates normally, breakover current of the IGBT flows through the sampling resistor R1, a signal is input at a positive phase input end of the operational amplifier U1, and the operational amplifier U1 can output a voltage signal; if the IGBT breaks down, no current flows through the sampling resistor R1, no signal is input to the positive phase input end of the operational amplifier U1, and the operational amplifier U1 cannot output a voltage signal. Compared with the prior art that after-sales troubleshooting difficulty is large due to the fact that after an IGBT breaks down, a mainboard reports a bus voltage too low fault, the technical scheme provided by the invention can