Semiconductor device

The embodiment of the invention provides a semiconductor device, which comprises a first control circuit, a second control circuit, a first control element and a second control element, a direct current amplification coefficient of a first parasitic element between a first control circuit and a first control element is set to be smaller than a direct current amplification coefficient of a second parasitic element between the first control circuit and a second control element. Thus, the operation of the first parasitic element can be suppressed, and the second control circuit can be prevented from continuously outputting a high-level first control signal, thereby preventing a load from being damaged by continuously flowing a large current without increasing the circuit scale. 本申请实施例提供一种半导体装置，所述半导体装置包括第一控制电路、第二控制电路、第一控制元件以及第二控制元件，通过将第一控制电路和第一控制元件之间的第一寄生元件的直流电流放大系数设为比第一控制电路和第二控制元件之间的第二寄生元件的直流电流放大系数小，从而在第二控制电路的供给电压发生变化时，能够抑制第一寄生元件的动作，防止第二控制电路持续输出高电平的第一控制信号，由此，在不会增大电路规模的同时防止负载持续流过大电流而损坏。