Semiconductor device based on hydrogen control and preparation method

The invention relates to a semiconductor device based on hydrogen control. The semiconductor device comprises a passivation layer, a barrier absorption layer, an oxide layer and a silicon layer which are connected in sequence. And the titanium layer is used as a barrier absorption layer to prevent hydrogen from entering the oxide layer and absorb excessive hydrogen in the oxide layer, so that the content of hydrogen in the oxide layer is controlled. The invention also relates to a preparation method of the semiconductor device based on hydrogen control, which comprises the steps of tape-out, preparation of the barrier absorption layer, packaging, optimization of the barrier absorption layer, and selection of the thickness and the material of the barrier absorption layer through comparison of irradiation tests. According to the invention, the hydrogen barrier absorption layer is arranged to prevent the formation of radiation-induced defect interface traps, and the total dose resistance of the semiconductor dev