Wide-stress full-linear flexible ionizing sensor and preparation method thereof
The invention provides a wide-stress full-linear flexible ionizing sensor and a preparation method thereof, the wide-stress full-linear flexible ionizing sensor comprises thermal shrinkage film material layers, flexible AgNWs/MXene electrodes and a dielectric layer, the dielectric layer is pasted be...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a wide-stress full-linear flexible ionizing sensor and a preparation method thereof, the wide-stress full-linear flexible ionizing sensor comprises thermal shrinkage film material layers, flexible AgNWs/MXene electrodes and a dielectric layer, the dielectric layer is pasted between the two flexible AgNWs/MXene electrodes, and the two flexible AgNWs/MXene electrodes are provided with the corresponding thermal shrinkage film material layers. According to the electrode, the AgNWs and MXene composite electrode with good mechanical performance is adopted, the AgNWs microelectrode provides a conductive framework, and MXene plays a role in protecting AgNWs from being oxidized and corroded and providing pseudocapacitance; based on the ionizing effect of the ionic gel film, the ionic gel film with a porous microstructure is used as the dielectric layer, so that the dielectric layer obtains a larger deformable surface area and also provides larger deformability which is thousands of times that of |
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