High power module package structure

The invention relates to a high power module package structure. A method disclosed in an embodiment includes disposing a first direct bond metal (DBM) substrate substantially parallel apart from a second DBM substrate by a distance to enclose a space. The method further includes disposing at least one semiconductor die in the space; and bonding the semiconductor die to the first DBM substrate using a first adhesive layer without an intermediate spacer block between the semiconductor die and the first DBM substrate; and bonding the semiconductor die to the second DBM substrate using a second adhesive without an intermediate spacer block between the semiconductor die and the second DBM substrate. 本公开涉及高功率模块封装件结构。实施例中公开的方法包括将第一直接接合金属(DBM)衬底设置成与第二DBM衬底基本上平行分开一定距离以封闭空间。该方法还包括：将至少一个半导体管芯设置在该空间中；以及在该半导体管芯和该第一DBM衬底之间没有中间间隔块的情况下，使用第一粘合剂层将该半导体管芯接合到该第一DBM衬底；以及在该半导体管芯和该第二DBM衬底之间没有中间间隔块的情况下，使用第二粘合剂将该半导体管芯接合到该第二DBM衬底。