Method for cleaning group III nitride single crystal substrate and method for producing group III nitride single crystal substrate

Provided are a method for cleaning a group III nitride single crystal substrate and a method for manufacturing a group III nitride single crystal substrate with which it is possible to remove foreign matter while suppressing roughness of a nitrogen polar surface of the group III nitride single cryst...

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Bibliographische Detailangaben
Hauptverfasser:	FUKUDA MASAYUKI, YAMAMOTO REO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Provided are a method for cleaning a group III nitride single crystal substrate and a method for manufacturing a group III nitride single crystal substrate with which it is possible to remove foreign matter while suppressing roughness of a nitrogen polar surface of the group III nitride single crystal substrate. This method for cleaning a group III nitride single crystal substrate has a group III element polar surface and a nitrogen polar surface provided on the back surface of the group III element polar surface, and is characterized in that the nitrogen polar surface is cleaned with a cleaning agent containing a fluorine-based organic compound. 本发明提供可抑制III族氮化物单晶基板的氮极性面粗糙并去除异物的III族氮化物单晶基板的清洗方法及III族氮化物单晶基板的制造方法。本发明的III族氮化物单晶基板的清洗方法，其特征在于，其是具有III族元素极性面与设于该III族元素极性面的背面的氮极性面的III族氮化物单晶基板的清洗方法，以包含氟系有机化合物的清洗剂清洗前述氮极性面。