Semiconductor laser element with strain polarity topology layer

The invention relates to the technical field of semiconductor devices, in particular to a semiconductor laser element with a strain polarity topological layer. Strain polarity topology layers are arranged between an upper limiting layer and an upper waveguide layer and between a lower limiting layer and a lower waveguide layer of the laser element. The layer is of a three-dimensional high-order topological superlattice structure which is formed by more than one of SrZnSO, PbTiO3, Ta2PdS5, CdPS3, SrTiO3 and hBN; the strain polarity topological layer generates polarity anti-vortex and polarity topological characteristics, reduces the polarization effect of the active layer, improves the carrier injection uniformity, and enhances tunable second harmonics and nonlinear optical properties, so that laser is propagated along the direction of the active layer, light is prevented from leaking to the substrate, the substrate mode is inhibited, and the far-field image quality is improved. An internal light field is limi