Polarization effect-based multi-heterojunction photoelectric detector and preparation method thereof

The polarization effect-based multi-heterojunction photoelectric detector comprises a detector and a device prepared on the detector, the detector is made of a group III nitride material, and the device comprises a substrate, a buffer layer, a lower contact layer, a lower barrier layer, an upper barrier layer and an upper contact layer which are sequentially arranged from bottom to top; an upper contact electrode and a lower contact electrode are respectively arranged on the surfaces of the upper contact layer and the lower contact layer; the upper barrier layer and the lower barrier layer form a main heterojunction structure, and negative polarization charges are accumulated on an interface of the upper barrier layer and the lower barrier layer; the upper barrier layer is a single-component layer, and the lower barrier layer is a multi-component layer. According to the invention, based on the polarization effect principle of III-group nitride, the transport of electrons and holes is regulated and controlled