Semiconductor structure and forming method thereof

A semiconductor structure and a method of forming the same, the method including forming a first fin structure over a first region of a substrate and a second fin structure over a second region of the substrate, forming a first gate dielectric layer around the first fin structure and a second gate dielectric layer around the second fin structure, forming a barrier layer over the first gate dielectric layer, the method further includes processing the substrate with a first fluorine-containing gas, after processing the substrate with the first fluorine-containing gas, forming a work function layer over the second gate dielectric layer, and after forming the work function layer over the second gate dielectric layer, processing the substrate with a second fluorine-containing gas. 一种半导体结构及其形成方法，此方法包含形成第一鳍结构于基底的第一区之上以及第二鳍结构于基底的第二区之上，形成第一栅极介电层围绕第一鳍结构和第二栅极介电层围绕第二鳍结构，形成阻挡层于第一栅极介电层之上，用第一含氟气体处理基底，在用第一含氟气体处理基底之后，形成功函数层于第二栅极介电层之上，以及在形成功函数层于第二栅极介电层之上之后，用第二含氟气体处理基底。