Novel protective diode structure for stacked image sensor devices

The invention relates to a novel protection diode structure for stacked image sensor devices. The first side of the sensor wafer is bonded to the first side of the first logic wafer. The sensor wafer includes pixels configured to detect radiation entering the sensor wafer through a second side of th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	XU CIXUAN, GAO MINFENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!