Novel protective diode structure for stacked image sensor devices

The invention relates to a novel protection diode structure for stacked image sensor devices. The first side of the sensor wafer is bonded to the first side of the first logic wafer. The sensor wafer includes pixels configured to detect radiation entering the sensor wafer through a second side of the sensor wafer opposite the first side. The first logic wafer includes circuitry configured to operate the pixels. The sensor wafer or the first logic wafer contains a protection diode. The first logic wafer is thinned from a second side of the first logic wafer opposite the first side. A through substrate via (TSV) is formed in the first logic wafer. The protection diode protects the sensor wafer or the first logic wafer from damage during TSV formation. A second side of the first logic wafer is bonded to a second logic wafer. The sensor wafer is thinned from the second side of the sensor wafer. 本公开涉及用于堆叠图像传感器器件的新型保护二极管结构。将传感器晶圆的第一侧面接合到第一逻辑晶圆的第一侧面。传感器晶圆包含像素，该像素被配置为检测通过传感器晶圆的与第一侧面相反的第二侧面进入传感器晶圆的辐射。第一逻辑晶圆包含被配置为操作像素的