Phase inverter based on quasi-enhanced gallium nitride device and manufacturing method thereof

The invention provides an inverter based on a quasi-enhanced gallium nitride device and a manufacturing method thereof, the inverter comprises a depletion type load transistor and a quasi-enhanced type load transistor, and the quasi-enhanced type load transistor is formed by connecting a plurality of diodes in series between a source electrode and a grid electrode of the depletion type load transistor. The drain electrode of the quasi-enhanced load transistor is connected with the source electrode and the grid electrode of the depletion-type load transistor, the quasi-enhanced GaN HEMT device with the positive threshold voltage is prepared by changing the structure of the device, a semiconductor layer does not need to be etched, and the manufacturing cost is reduced. The requirement on etching equipment is reduced, the preparation process flow is simplified, meanwhile, the damage caused by etching is avoided, and the performance of the device is improved; a quasi-enhanced device and a depletion device are int