Drain-source electrode electric leakage improvement process of silicon polished wafer

The invention relates to a drain-source electrode electric leakage improvement process for a silicon polished wafer, which comprises the following steps of: 1, performing high-temperature treatment, namely putting the silicon polished wafer into a high-temperature furnace, raising the temperature to 1100-1250 DEG C, performing heat treatment for 140-160 minutes, and ensuring that the high-temperature furnace is filled with nitrogen and oxygen to form a nitrogen and oxygen mixed environment; 2, second-step high-temperature treatment is conducted, specifically, the temperature in the high-temperature furnace is reduced to 650-720 DEG C, it is guaranteed that the heat treatment time is 100-130 minutes, oxygen conveying is stopped, and it is guaranteed that the inside is in a nitrogen environment; 3, high-temperature treatment is conducted, specifically, the temperature in the high-temperature furnace is increased to 720-850 DEG C, it is guaranteed that the heat treatment time is 145-155 minutes, and it is guaran