Direct-current-driven high-power spin oscillator and preparation process thereof

The invention discloses a direct-current-driven high-power spin oscillator and a preparation process thereof. The spin oscillator is composed of a first metal layer, a second metal layer and a substrate layer which are the same in shape. The first metal layer and the second metal layer form a double-layer heterojunction structure, and the second metal layer is connected with a direct current source; the first metal layer in the double-layer heterojunction structure is made of a metal material with a strong spin-orbit coupling effect, and the second metal layer is made of a metal material with strong ferromagnetism. According to the spin oscillator, epitaxial layers are deposited twice by using a magnetron sputtering process to serve as the first metal layer and the second metal layer, so that the spin oscillator has the advantages of direct current driving, high output power, simple preparation process and coherence of spin oscillation; the method can be applied to on-chip integrated low-temperature coherent