Component structure

The invention discloses an element structure. The structure of the element comprises a metal-insulator-metal (metal-insulator-metal; and MIM) stacking. The MIM stack includes at least a lower conductor plate layer, a first insulating layer disposed over the lower conductor plate layer, a first conductor plate layer disposed over the first insulating layer, a second insulating layer disposed over the first conductor plate layer, and a second conductor plate layer disposed over the second insulating layer. The device structure further includes a ground via extending through and electrically coupled to the first ground plate in the first conductor plate layer and a first via extending through and electrically coupled to the high voltage plate in the second conductor plate layer. The first ground plate vertically overlaps the high voltage plate, and the second insulating layer is different from the first insulating layer. 本公开一种元件结构。元件结构包含金属-绝缘体-金属(Metal-insulator-metal；MIM)堆叠。MIM堆叠包含至少一下导体板层、一设置于下导体板层之上的第一绝缘层、一设置