Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device includes: forming a plurality of reference patterns and a peripheral pattern on a feature layer by using a first material such that the peripheral pattern is connected to ends of the plurality of reference patterns; forming a plurality of first spacers on both sidewalls of each of the plurality of reference patterns by using a second material; removing the plurality of reference patterns; forming a plurality of second spacers on both sidewalls of each of the plurality of first spacers by using a first material; removing the plurality of first spacers such that the plurality of second spacers and the peripheral pattern are retained on the feature layer; and patterning the feature layer by using the plurality of second spacers and the peripheral pattern as an etch mask. 一种制造半导体器件的方法，包括：通过使用第一材料在特征层上形成多个参考图案和外围图案，使得外围图案连接到多个参考图案的端部；通过使用第二材料在多个参考图案中的每一个参考图案的两个侧壁上形成多个第一间隔物；去除多个参考图案；通过使用第一材料在多个第一间隔物中的每一个第一间隔物的两个侧壁上形成多个第二间隔物；去除多个第一间隔物，使得多个第二间隔物和外围图案保留在特征层上；以及通过使用多个第二间