Accelerated aging test platform for SiC MOSFET device in vacuum and normal pressure environment

The invention discloses a vacuum and normal pressure environment SiC MOSFET device accelerated aging test platform. The platform comprises a heating control unit, a detection control unit, a data acquisition module, a first to-be-tested device DUT1 arranged in a vacuum environment and a second to-be...

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Bibliographische Detailangaben
Hauptverfasser:	REN HONGYU, LIU QIANGQIANG, ZHOU JUNJIE, CHEN RUI, WANG ZHENYE, YU YAOYI, DU XIONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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Beschreibung
Zusammenfassung:	The invention discloses a vacuum and normal pressure environment SiC MOSFET device accelerated aging test platform. The platform comprises a heating control unit, a detection control unit, a data acquisition module, a first to-be-tested device DUT1 arranged in a vacuum environment and a second to-be-tested device DUT2 arranged in a normal pressure environment. The heating control unit is connected with the detection control unit in parallel, and the first to-be-tested device DUT1 and the second to-be-tested device DUT2 are connected with the heating control unit and the detection control unit in parallel after being connected in series; the data acquisition module is connected with the first to-be-tested device DUT1 and the second to-be-tested device DUT2 and is used for acquiring experimental data of the first to-be-tested device DUT1 and the second to-be-tested device DUT2. According to the invention, accelerated aging can be carried out on the SiC MOSFET device in vacuum and normal pressure environments at