Indium compound, method for producing same, composition for deposition of indium-containing thin film, and method for producing indium-containing thin film

The present invention relates to an indium compound, a method for manufacturing the same, a composition for deposition of an indium-containing thin film comprising the same, and a method for manufacturing an indium-containing thin film using the same, the indium compound of the present invention hav...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	JEON SANG-YONG, KWON YONG-HEE, LEE SANG ICK, LIM YOUNG JAE, BYUN TAE-SEOK, LEE SANGAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention relates to an indium compound, a method for manufacturing the same, a composition for deposition of an indium-containing thin film comprising the same, and a method for manufacturing an indium-containing thin film using the same, the indium compound of the present invention having excellent thermal stability, high volatility, and improved vapor pressure. Therefore, an indium-containing thin film with a uniform thickness can be manufactured at an improved deposition speed. 本发明涉及铟化合物、其制造方法、包含其的含铟薄膜沉积用组合物、以及利用其的含铟薄膜的制造方法，本发明的铟化合物通过具有优异的热稳定性、高的挥发性和提高的蒸气压，从而可以采用其以提高的沉积速度制造均匀厚度的含铟薄膜。