OPC repairing method for semiconductor top layer metal

The invention relates to the technical field of semiconductors, and discloses a semiconductor top metal OPC repairing method comprising the steps that a top metal pattern is formed on a substrate, the top metal pattern comprises a first metal wire with a right-angle bend and a second metal wire with a right-angle bend in a set range area of the inner angle direction of the right-angle bend of the first metal wire, a second metal line parallel or perpendicular to the first metal line; taking the vertex of the right-angle bent inner angle of the first metal wire as an original point, and forming a fan-shaped region by the overlapped part of the circular region with the radius of R and the right-angle bent inner angle region of the first metal wire; according to the minimum distance between the first metal wire and the second metal wire in the fan-shaped area, target metal is repaired at the right-angle bent inner corner of the first metal wire, and the shape of the target metal is an equilateral right triangle