Manufacturing method of metal interconnection structure

The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a manufacturing method of a metal interconnection structure. The manufacturing method of the metal interconnection structure comprises the following steps: etching a dielectric layer to form an interconnection groove based on a pattern of a mask layer in a reaction cavity; inert gas is introduced into the reaction cavity, and water vapor in the reaction cavity is expelled; the dielectric layer is cleaned, and etching by-products are removed; introducing inert gas into the reaction cavity again, and expelling water vapor in the reaction cavity; and filling a metal layer in the interconnection groove. According to the manufacturing method of the metal interconnection structure, the problem that the dielectric layer TDDB of a low-dielectric-constant material becomes poor in the prior art can be solved. 本申请涉及半导体集成电路制造技术领域，具体涉及一种金属互连结构的制作方法。所述金属互连结构的制作方法包括以下步骤：在反应腔中，基于掩膜层的图案，刻蚀介质层形成互连槽；向所述反应腔中通入惰性气体，驱逐所