Conductive features and methods of making semiconductor devices

The invention discloses a conductive feature and a preparation method of a semiconductor element. The preparation method comprises the following steps: providing a substrate; forming a groove in the substrate; conformally forming a first nucleating layer in the groove; performing a post-treatment on the first nucleating layer; and forming a first bulk layer on the first nucleating layer to fill the groove. The first nucleation layer and the first bulk layer are configured as a conductive feature. The first nucleation layer and the first bulk layer include tungsten. The post-treatment includes a borane-containing reducing agent. 本申请案公开一种导电特征和半导体元件的制备方法。该制备方法包括提供一基底；在基底中形成一凹槽；共形地在凹槽中形成一第一成核层；对第一成核层执行一后处理；以及在第一成核层上形成一第一块状层以填充凹槽。第一成核层和第一块状层配置成一导电特征。第一成核层和第一块状层包括钨。后处理包括含硼烷的还原剂。