SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

A semiconductor device and a method of forming the same. The method of forming a semiconductor device includes forming a source/drain region on a substrate; forming a first interlayer dielectric on the source/drain region; forming a gate structure on the substrate and laterally adjacent to the source/drain region; and forming a gate mask on the gate structure, and forming the gate mask including: etching a portion of the gate structure to form a recess relative to a top surface of the first interlayer dielectric; depositing a first dielectric layer on the recessed gate structure and the first interlayer dielectric; etching a portion of the first dielectric layer; depositing a semiconductor layer on the recessed first dielectric layer; and planarizing the semiconductor layer so as to coplane the first interlayer dielectric. In another example, the method further includes forming a gate spacer on the substrate, etching a portion of the gate structure further including etching the portion of the gate spacer. 一种半